380 research outputs found

    Spin Blockade in Capacitively Coupled Quantum Dots

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    We present transport measurements on a lateral double dot produced by combining local anodic oxidation and electron beam lithography. We investigate the tunability of our device and demonstrate, that we can switch between capacitive and tunnel coupling. In the regime of capacitive coupling we observe the phenomenon of spin blockade in a magnetic field and analyze the influence of capacitive interdot coupling on this effect.Comment: 4 pages, 3 figure

    Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters

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    We investigated the size dependence of the ground state energy in self-assembled InAs quantum dots embedded in resonant tunneling diodes. Individual current steps observed in the current-voltage characteristics are attributed to resonant single-electron tunneling via the ground state of individual InAs quantum dots. The onset voltage of the first step observed is shown to decrease systematically from 200 mV to 0 with increasing InAs coverage. We relate this to a coverage-dependent size of InAs dots grown on AlAs. The results are confirmed by atomic force micrographs and photoluminescence experiments on reference samples.Comment: 3 pages, 3 figure

    Fabrication of quantum point contacts by engraving GaAs/AlGaAs-heterostructures with a diamond tip

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    We use the all-diamond tip of an atomic force microscope for the direct engraving of high quality quantum point contacts in GaAs/AlGaAs-heterostructures. The processing time is shortened by two orders of magnitude compared to standard silicon tips. Together with a reduction of the line width to below 90 nm the depletion length of insulating lines is reduced by a factor of two with the diamond probes. The such fabricated defect free ballistic constrictions show well resolved conductance plateaus and the 0.7 anomaly in electronic transport measurements.Comment: 3 pages, 3 figure

    Kondo effect in a few-electron quantum ring

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    A small quantum ring with less than 10 electrons was studied by transport spectroscopy. For strong coupling to the leads a Kondo effect is observed and used to characterize the spin structure of the system in a wide range of magnetic fields. At small magnetic fields Aharonov-Bohm oscillations influenced by Coulomb interaction appear. They exhibit phase jumps by π\pi at the Coulomb-blockade resonances. Inside Coulomb-blockade valleys the Aharonov-Bohm oscillations can also be studied due to the finite conductance caused by the Kondo effect. Astonishingly, the maxima of the oscillations show linear shifts with magnetic field and gate voltage.Comment: 4 pages, 4 figure

    Combined atomic force microscope and electron-beam lithography used for the fabrication of variable-coupling quantum dots

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    We have combined direct nanofabrication by local anodic oxidation with conventional electron-beam lithography to produce a parallel double quantum dot based on a GaAs/AlGaAs heterostructure. The combination of both nanolithography methods allows to fabricate robust in-plane gates and Cr/Au top gate electrodes on the same device for optimal controllability. This is illustrated by the tunability of the interdot coupling in our device. We describe our fabrication and alignment scheme in detail and demonstrate the tunability in low-temperature transport measurements.Comment: 4 pages, 3 figure

    Interacting electrons on a quantum ring: exact and variational approach

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    We study a system of interacting electrons on a one-dimensional quantum ring using exact diagonalization and the variational quantum Monte Carlo method. We examine the accuracy of the Slater-Jastrow -type many-body wave function and compare energies and pair distribution functions obtained from the two approaches. Our results show that this wave function captures most correlation effects. We then study the smooth transition to a regime where the electrons localize in the rotating frame, which for the ultrathin quantum ring system happens at quite high electron density.Comment: 19 pages, 10 figures. Accepted for publication in the New Journal of Physic

    Aharonov-Bohm oscillations of a tunable quantum ring

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    With an atomic force microscope a ring geometry with self-aligned in-plane gates was directly written into a GaAs/AlGaAs-heterostructure. Transport measurements in the open regime show only one transmitting mode and Aharonov-Bohm oscillations with more than 50% modulation are observed in the conductance. The tuning via in-plane gates allows to study the Aharonov-Bohm effect in the whole range from the open ring to the Coulomb-blockade regime.Comment: 3 pages, 3 figure

    Mass measurements near the rr-process path using the Canadian Penning Trap mass spectrometer

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    The masses of 40 neutron-rich nuclides from Z = 51 to 64 were measured at an average precision of δm/m=10−7\delta m/m= 10^{-7} using the Canadian Penning Trap mass spectrometer at Argonne National Laboratory. The measurements, of fission fragments from a 252^{252}Cf spontaneous fission source in a helium gas catcher, approach the predicted path of the astrophysical rr process. Where overlap exists, this data set is largely consistent with previous measurements from Penning traps, storage rings, and reaction energetics, but large systematic deviations are apparent in β\beta-endpoint measurements. Differences in mass excess from the 2003 Atomic Mass Evaluation of up to 400 keV are seen, as well as systematic disagreement with various mass models.Comment: 15 pages, 16 figures. v2 updated, published in Physical Review

    Nanolithography and manipulation of graphene using an atomic force microscope

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    We use an atomic force microscope (AFM) to manipulate graphene films on a nanoscopic length scale. By means of local anodic oxidation with an AFM we are able to structure isolating trenches into single-layer and few-layer graphene flakes, opening the possibility of tabletop graphene based device fabrication. Trench sizes of less than 30 nm in width are attainable with this technique. Besides oxidation we also show the influence of mechanical peeling and scratching with an AFM of few layer graphene sheets placed on different substrates.Comment: 11 pages text, 5 figure
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